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Part Datasheet Search > MOSFETs > ST Microelectronics > STB200N4F3 Datasheet PDF
STB200N4F3
$ 3.796
STB200N4F3 Datasheet PDF (14 Pages)
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STB200N4F3 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-263-3
Number of Channels
1 Channel
Drain to Source Resistance (on) (Rds)
3.1 mΩ
Polarity
N-Channel
Power Dissipation
300 W
Drain to Source Voltage (Vds)
40 V
Breakdown Voltage (Drain to Source)
40 V
Continuous Drain Current (Ids)
60.0 A
Rise Time
180 ns
Input Capacitance (Ciss)
5100pF @25V(Vds)
Fall Time
65 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
55 ℃
Power Dissipation (Max)
300W (Tc)

STB200N4F3 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Not Recommended for New Designs
Packaging
Tape & Reel (TR)
Size-Length
10.4 mm
Size-Width
9.35 mm
Size-Height
4.6 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

STB200N4F3 Documents

ST Microelectronics
14 Pages / 0.4 MByte

STB200N4 Documents

ST Microelectronics
D2PAK N-CH 40V 120A
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