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STB200NF03T4
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STB200NF03T4 Datasheet PDF (18 Pages)
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STB200NF03T4 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Voltage Rating (DC)
30.0 V
Current Rating
120 A
Case/Package
TO-263-3
Number of Channels
1 Channel
Drain to Source Resistance (on) (Rds)
3.2 mΩ
Polarity
N-Channel
Power Dissipation
300 W
Threshold Voltage
4 V
Drain to Source Voltage (Vds)
30 V
Breakdown Voltage (Drain to Source)
30 V
Breakdown Voltage (Gate to Source)
±20.0 V
Continuous Drain Current (Ids)
60.0 A
Rise Time
195 ns
Input Capacitance (Ciss)
4950pF @25V(Vds)
Input Power (Max)
300 W
Fall Time
60 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
300000 mW

STB200NF03T4 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
10.4 mm
Size-Width
9.35 mm
Size-Height
4.6 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

STB200NF03T4 Documents

ST Microelectronics
18 Pages / 0.43 MByte

STB200NF03 Documents

ST Microelectronics
D2PAK N-CH 30V 120A
ST Microelectronics
STMICROELECTRONICS STB200NF03T4 MOSFET Transistor, N Channel, 120A, 30V, 3.2mohm, 10V, 4V
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