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STB200NF04-1 Datasheet PDF - ST Microelectronics

Manufacturer:

ST Microelectronics

Category:

MOSFETs

Case Package:

TO-262-3

Description:

I2PAK N-CH 40V 120A

Pictures:

3D Model

Symbol

Footprint

Pinout

Product Pictures

Documentation:

STB200NF04-1 Datasheet (15 Pages)

STB200NF04-1 Datasheet PDF (15 Pages)

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STB200NF04-1 Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Voltage Rating (DC)

40.0 V

Current Rating

120 A

Case/Package

TO-262-3

Polarity

N-CH

Power Dissipation

310W (Tc)

Drain to Source Voltage (Vds)

40 V

Continuous Drain Current (Ids)

120 A

Rise Time

320 ns

Input Capacitance (Ciss)

5100pF @25V(Vds)

Input Power (Max)

310 W

Power Dissipation (Max)

310W (Tc)

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STB200NF04-1 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Unknown

Packaging

Tube

Operating Temperature

-55℃ ~ 175℃ (TJ)

View Datasheet >

STB200NF04-1 Environmental

STB200NF04-1 Function Overview

STB200NF04-1 Documents

STB200NF04-1 Datasheet

ST Microelectronics

15 Pages / 0.39 MByte

STB200NF04-1 Other Datasheet PDF

ST Microelectronics

15 Pages / 0.33 MByte

STB200NF04-1 Other References

ST Microelectronics

1 Pages / 0.13 MByte

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