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STB20NM50T4 Datasheet PDF - ST Microelectronics

Manufacturer:

ST Microelectronics

Category:

MOSFETs

Case Package:

TO-263-3

Description:

D2PAK N-CH 500V 20A

Pictures:

3D Model

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Documentation:

STB20NM50T4 Datasheet (14 Pages)

Package Outline Dimension on10 Page 11 Page 12 Page

STB20NM50T4 Datasheet PDF (14 Pages)

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STB20NM50T4 Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Voltage Rating (DC)

550 V

Current Rating

20.0 A

Case/Package

TO-263-3

Number of Channels

1 Channel

Number of Positions

3 Position

Drain to Source Resistance (on) (Rds)

0.2 Ω

Polarity

N-Channel

Power Dissipation

192 W

Threshold Voltage

4 V

Input Capacitance

1.48 nF

Gate Charge

56.0 nC

Drain to Source Voltage (Vds)

550 V

Breakdown Voltage (Drain to Source)

500 V

Breakdown Voltage (Gate to Source)

±30.0 V

Continuous Drain Current (Ids)

20.0 A

Rise Time

16 ns

Input Capacitance (Ciss)

1480pF @25V(Vds)

Input Power (Max)

192 W

Fall Time

8.5 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-65 ℃

Power Dissipation (Max)

192W (Tc)

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STB20NM50T4 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tape & Reel (TR)

Size-Length

10.4 mm

Size-Width

9.35 mm

Size-Height

4.6 mm

Operating Temperature

-65℃ ~ 150℃ (TJ)

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STB20NM50T4 Environmental

STB20NM50T4 Function Overview

STB20NM50T4 Documents

STB20NM50T4 Datasheet

ST Microelectronics

14 Pages / 0.3 MByte

STB20NM50T4 Other References

ST Microelectronics

1 Pages / 0.13 MByte

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