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STB20NM60-1 Datasheet PDF - ST Microelectronics

Manufacturer:

ST Microelectronics

Category:

MOSFETs

Case Package:

TO-262-3

Description:

I2PAK N-CH 600V 20A

Pictures:

3D Model

Symbol

Footprint

Pinout

Product Pictures

Documentation:

STB20NM60-1 Datasheet (18 Pages)

Package Outline Dimension on10 Page 11 Page 12 Page 13 Page 14 Page

STB20NM60-1 Datasheet PDF (18 Pages)

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STB20NM60-1 Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

3 Pin

Voltage Rating (DC)

600 V

Current Rating

20.0 A

Case/Package

TO-262-3

Number of Channels

1 Channel

Drain to Source Resistance (on) (Rds)

290 mΩ

Polarity

N-Channel

Power Dissipation

192 W

Input Capacitance

1.50 nF

Gate Charge

54.0 nC

Drain to Source Voltage (Vds)

600 V

Breakdown Voltage (Drain to Source)

600 V

Breakdown Voltage (Gate to Source)

±30.0 V

Continuous Drain Current (Ids)

20.0 A

Rise Time

20 ns

Input Capacitance (Ciss)

1500pF @25V(Vds)

Input Power (Max)

192 W

Fall Time

11 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

65 ℃

Power Dissipation (Max)

192W (Tc)

View Datasheet >

STB20NM60-1 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Unknown

Packaging

Tube

Size-Length

10 mm

Size-Width

4.4 mm

Size-Height

8.95 mm

Operating Temperature

150℃ (TJ)

View Datasheet >

STB20NM60-1 Environmental

STB20NM60-1 Function Overview

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STB20NM60-1 Datasheet

ST Microelectronics

18 Pages / 0.42 MByte

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