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Part Datasheet Search > MOSFETs > ST Microelectronics > STB21NM60N-1 Datasheet PDF
STB21NM60N-1
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STB21NM60N-1 Datasheet PDF (18 Pages)
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STB21NM60N-1 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Voltage Rating (DC)
600 V
Current Rating
17.0 A
Case/Package
TO-262-3
Drain to Source Resistance (on) (Rds)
220 mΩ
Polarity
N-Channel
Power Dissipation
140W (Tc)
Input Capacitance
1.95 nF
Gate Charge
66.0 nC
Drain to Source Voltage (Vds)
600 V
Breakdown Voltage (Drain to Source)
600 V
Continuous Drain Current (Ids)
10.0 A, 17.0 A
Input Capacitance (Ciss)
1900pF @50V(Vds)
Input Power (Max)
140 W
Power Dissipation (Max)
140W (Tc)

STB21NM60N-1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Tube
Operating Temperature
150℃ (TJ)

STB21NM60N-1 Documents

ST Microelectronics
18 Pages / 0.55 MByte

STB21NM60 Documents

ST Microelectronics
STMICROELECTRONICS STB21NM60ND Power MOSFET, N Channel, 17A, 600V, 0.17Ω, 10V, 4V
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N-CHANNEL 600V - 0.19Ω - 17A TO-220/FP/D2/I2PAK/TO-247 SECOND GENERATION MDmesh MOSFET
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N-channel 600V - 0.17Ω - 17A TO-220 - TO-220FP - D2PAK - I2PAK - TO-247 second generation MDmesh Power MOSFET
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N-channel 600 V, 0.17 Ω, 17 A FDmesh™ II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247
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