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Part Datasheet Search > MOSFETs > ST Microelectronics > STB25NM60N Datasheet PDF
STB25NM60N
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STB25NM60N Datasheet PDF (18 Pages)
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STB25NM60N Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Voltage Rating (DC)
600 V
Current Rating
20.0 A
Case/Package
TO-263-3
Drain to Source Resistance (on) (Rds)
140 mΩ
Polarity
N-Channel
Power Dissipation
160W (Tc)
Input Capacitance
2.54 nF
Gate Charge
84.0 nC
Drain to Source Voltage (Vds)
600 V
Breakdown Voltage (Drain to Source)
600 V
Breakdown Voltage (Gate to Source)
±25.0 V
Continuous Drain Current (Ids)
21.0 A
Rise Time
18 ns
Input Capacitance (Ciss)
2400pF @50V(Vds)
Input Power (Max)
160 W
Fall Time
24 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
160W (Tc)

STB25NM60N Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Cut Tape (CT)
Operating Temperature
150℃ (TJ)

STB25NM60N Documents

ST Microelectronics
18 Pages / 0.58 MByte

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