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STB55NE06
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STB55NE06 Datasheet PDF (8 Pages)
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STB55NE06 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Case/Package
TO-263
Drain to Source Resistance (on) (Rds)
22.0 mΩ
Polarity
N-Channel
Power Dissipation
130 W
Drain to Source Voltage (Vds)
60 V
Breakdown Voltage (Drain to Source)
60.0 V
Breakdown Voltage (Gate to Source)
±20.0 V
Continuous Drain Current (Ids)
55.0 A
Rise Time
120 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-60 ℃

STB55NE06 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown

STB55NE06 Documents

ST Microelectronics
8 Pages / 0.2 MByte

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