STB55NF03L-1 Datasheet PDF - ST Microelectronics

●DESCRIPTION

●This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™"

●strip-based process. The resulting transistor shows extremely high packing density for low on

●resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark able manufacturing reproducibility.

●■ TYPICAL RDS(on) = 0.01 Ω

●■ OPTIMIZED FOR HIGH SWITCHING OPERATIONS

●■ LOW GATE CHARGE

●■ LOGIC LEVEL GATE DRIVE

●APPLICATIONS

●■ LOW VOLTAGE DC-DC CONVERTERS

●■ HIGH CURRENT, HIGH SWITCHING SPEED

●■ HIGH EFFICIENCY SWITCHING CIRCUITS