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Part Datasheet Search > MOSFETs > ST Microelectronics > STB55NF03LT4 Datasheet PDF
STB55NF03LT4
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STB55NF03LT4 Datasheet PDF (11 Pages)
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STB55NF03LT4 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-263-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
10 mΩ
Polarity
N-Channel
Power Dissipation
80 W
Threshold Voltage
1 V
Drain to Source Voltage (Vds)
30 V
Breakdown Voltage (Drain to Source)
30.0 V
Breakdown Voltage (Gate to Source)
±16.0 V
Continuous Drain Current (Ids)
27.5 A
Rise Time
400 ns
Input Capacitance (Ciss)
1265pF @25V(Vds)
Fall Time
50 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-60 ℃
Power Dissipation (Max)
80000 mW

STB55NF03LT4 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Not Recommended for New Designs
Packaging
Tape & Reel (TR)
Operating Temperature
-60℃ ~ 175℃

STB55NF03LT4 Documents

ST Microelectronics
11 Pages / 0.33 MByte
ST Microelectronics
15 Pages / 0.49 MByte
ST Microelectronics
5 Pages / 0.04 MByte

STB55NF03 Documents

ST Microelectronics
D2PAK N-CH 30V 55A
ST Microelectronics
D2PAK N-CH 30V 55A
ST Microelectronics
I2PAK N-CH 30V 55A
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