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Part Datasheet Search > MOSFETs > ST Microelectronics > STB9NK70ZT4 Datasheet PDF
STB9NK70ZT4
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STB9NK70ZT4 Datasheet PDF (14 Pages)
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STB9NK70ZT4 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Voltage Rating (DC)
700 V
Current Rating
7.50 A
Case/Package
TO-263-3
Drain to Source Resistance (on) (Rds)
1.20 Ω
Polarity
N-Channel
Power Dissipation
115W (Tc)
Drain to Source Voltage (Vds)
700 V
Breakdown Voltage (Drain to Source)
700 V
Breakdown Voltage (Gate to Source)
±30.0 V
Continuous Drain Current (Ids)
7.50 A
Input Capacitance (Ciss)
1370pF @25V(Vds)
Input Power (Max)
115 W
Power Dissipation (Max)
115W (Tc)

STB9NK70ZT4 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Tape & Reel (TR)
Operating Temperature
-55℃ ~ 150℃ (TJ)

STB9NK70ZT4 Documents

ST Microelectronics
14 Pages / 0.65 MByte

STB9NK70 Documents

ST Microelectronics
N-CHANNEL 700V 1Ω 7.5A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFET
ST Microelectronics
N-CHANNEL 700V 1Ω 7.5A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFET
ST Microelectronics
D2PAK N-CH 700V 7.5A
ST Microelectronics
N-CHANNEL 700V - 1Ω - 7.5A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH™ Power MOSFET
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