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Part Datasheet Search > MOSFETs > ST Microelectronics > STD4NK60Z-1 Datasheet PDF
STD4NK60Z-1
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STD4NK60Z-1 Datasheet PDF (28 Pages)
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STD4NK60Z-1 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-251-3
Number of Channels
1 Channel
Drain to Source Resistance (on) (Rds)
2 Ω
Polarity
N-Channel
Power Dissipation
70 W
Drain to Source Voltage (Vds)
600 V
Breakdown Voltage (Drain to Source)
600 V
Continuous Drain Current (Ids)
2.00 A
Rise Time
9.5 ns
Input Capacitance (Ciss)
510pF @25V(Vds)
Input Power (Max)
70 W
Fall Time
16.5 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
55 ℃
Power Dissipation (Max)
70W (Tc)

STD4NK60Z-1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
6.6 mm
Size-Width
2.4 mm
Size-Height
6.2 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

STD4NK60Z-1 Documents

ST Microelectronics
28 Pages / 0.94 MByte
ST Microelectronics
16 Pages / 0.44 MByte
ST Microelectronics
32 Pages / 0.7 MByte

STD4NK60 Documents

ST Microelectronics
N-CHANNEL 600V - 1.76Ω - 4A TO-220/TO-220FP/DPAK/IPAK/D2PAK/I2PAK ZENER-PROTECTED SUPERMESH POWER MOSFET
ST Microelectronics
N-CHANNEL 600V - 1.76Ω - 4A TO-220/TO-220FP/DPAK/IPAK/D2PAK/I2PAK ZENER-PROTECTED SUPERMESH POWER MOSFET
ST Microelectronics
DPAK N-CH 600V 4A
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