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Part Datasheet Search > MOSFETs > ST Microelectronics > STE40NK90ZD Datasheet PDF
STE40NK90ZD
$ 35.43
STE40NK90ZD Datasheet PDF (13 Pages)
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STE40NK90ZD Specifications

TYPE
DESCRIPTION
Mounting Style
Screw
Number of Pins
4 Pin
Voltage Rating (DC)
900 V
Current Rating
40.0 A
Case/Package
ISOTOP-4
Power Rating
600 W
Drain to Source Resistance (on) (Rds)
180 mΩ
Polarity
N-Channel
Power Dissipation
600 W
Drain to Source Voltage (Vds)
900 V
Breakdown Voltage (Drain to Source)
900 V
Breakdown Voltage (Gate to Source)
±30.0 V
Continuous Drain Current (Ids)
40.0 A
Rise Time
102 ns
Input Capacitance (Ciss)
25000pF @25V(Vds)
Input Power (Max)
600 W
Fall Time
200 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
600W (Tc)

STE40NK90ZD Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Not Recommended for New Designs
Packaging
Tube
Size-Length
38.2 mm
Size-Width
25.5 mm
Size-Height
9.1 mm
Operating Temperature
-65℃ ~ 150℃ (TJ)

STE40NK90ZD Documents

ST Microelectronics
13 Pages / 0.29 MByte
ST Microelectronics
13 Pages / 0.29 MByte
ST Microelectronics
1 Pages / 0.13 MByte

STE40NK90 Documents

ST Microelectronics
N-CHANNEL 900V - 0.14Ω - 40A ISOTOP Fast Diode SuperMESH™Power MOSFET
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