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STF28N60DM2 Datasheet PDF - ST Microelectronics

Manufacturer:

ST Microelectronics

Category:

High Voltage MOS

Case Package:

TO-220-3

Description:

STMICROELECTRONICS STF28N60DM2 Power MOSFET, Mdmesh DM2, N Channel, 21A, 600V, 0.13Ω, 10V, 4V

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STF28N60DM2 Datasheet PDF (26 Pages)

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STF28N60DM2 Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

3 Pin

Case/Package

TO-220-3

Number of Positions

3 Position

Drain to Source Resistance (on) (Rds)

0.13 Ω

Polarity

N-Channel

Power Dissipation

30 W

Threshold Voltage

4 V

Drain to Source Voltage (Vds)

600 V

Rise Time

7.3 ns

Input Capacitance (Ciss)

1500pF @100V(Vds)

Fall Time

9.3 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

30W (Tc)

STF28N60DM2 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tube

Size-Length

10.4 mm

Size-Width

4.6 mm

Size-Height

16.4 mm

Operating Temperature

-55℃ ~ 150℃ (TJ)

STF28N60DM2 Environmental

STF28N60DM2 Function Overview

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STF28N60DM2 Other Datasheet PDF

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26 Pages / 0.29 MByte

STF28N60DM2 Packaging

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12 Pages / 0.57 MByte

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STF28N60DM2 Datasheet PDF

ST Microelectronics

STMICROELECTRONICS STF28N60DM2 Power MOSFET, Mdmesh DM2, N Channel, 21A, 600V, 0.13Ω, 10V, 4V

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