STGD6NC60H-1 Datasheet PDF - ST Microelectronics

●Minimize the current at your gate with the STGD6NC60H-1 IGBT transistor from STMicroelectronics. Its maximum power dissipation is 62500 mW. It has a maximum collector emitter voltage of 600 V. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes powermesh technology. It is made in a single configuration.