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STGP10NB60SD Datasheet PDF - ST Microelectronics

Manufacturer:

ST Microelectronics

Category:

IGBTs

Case Package:

TO-220-3

Description:

Trans IGBT Chip N-CH 600V 29A 80000mW 3Pin(3+Tab) TO-220 Tube

Pictures:

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Documentation:

STGP10NB60SD Datasheet (15 Pages)

Package Outline Dimension on10 Page 11 Page 12 Page 13 Page

STGP10NB60SD Datasheet PDF (15 Pages)

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STGP10NB60SD Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

3 Pin

Voltage Rating (DC)

600 V

Current Rating

20.0 A

Case/Package

TO-220-3

Polarity

N-Channel

Power Dissipation

80000 mW

Breakdown Voltage (Drain to Source)

600 V

Continuous Drain Current (Ids)

10.0 A

Rise Time

460 ns

Breakdown Voltage (Collector to Emitter)

600 V

Reverse recovery time

37 ns

Input Power (Max)

80 W

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

80000 mW

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STGP10NB60SD Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tube

Operating Temperature

-55℃ ~ 150℃ (TJ)

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STGP10NB60SD Environmental

STGP10NB60SD Export Classifications

STGP10NB60SD Function Overview

STGP10NB60SD Documents

STGP10NB60SD Datasheet

ST Microelectronics

15 Pages / 0.41 MByte

STGP10NB60SD Other References

ST Microelectronics

1 Pages / 0.13 MByte

STGP10NB60 Documents

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Trans IGBT Chip N-CH 600V 23A 3Pin(3+Tab) TO-220FP Tube

STGP10NB60SDFP Datasheet PDF

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