STGWT40V60DF Datasheet PDF - ST Microelectronics

●Don"t be afraid to step up the amps in your device when using this STGWT40V60DF IGBT transistor from STMicroelectronics. Its maximum power dissipation is 283000 mW. It has a maximum collector emitter voltage of 600 V. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This device is made with field stop|trench technology. It is made in a single configuration.