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STP10NM65N
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STP10NM65N Datasheet PDF (17 Pages)
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STP10NM65N Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
430 mΩ
Polarity
N-Channel
Power Dissipation
90 W
Threshold Voltage
3 V
Drain to Source Voltage (Vds)
650 V
Continuous Drain Current (Ids)
4.50 A
Rise Time
8 ns
Input Capacitance (Ciss)
850pF @50V(Vds)
Input Power (Max)
90 W
Fall Time
20 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
90W (Tc)

STP10NM65N Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Not Recommended for New Designs
Packaging
Tube
Size-Length
10.4 mm
Size-Width
4.6 mm
Size-Height
15.75 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

STP10NM65N Documents

ST Microelectronics
17 Pages / 0.51 MByte
ST Microelectronics
17 Pages / 1.48 MByte

STP10NM65 Documents

ST Microelectronics
N-channel 650V - 0.43Y - 9A - TO-220/FP- IPAK - DPAKN-channel 650V - 0.43Y - 9A - TO-220/FP- IPAK - DPAKSecond genera...
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