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STP11NM60N Datasheet PDF - ST Microelectronics

Manufacturer:

ST Microelectronics

Category:

MOSFETs

Case Package:

TO-220-3

Description:

TO-220 N-CH 600V 10A

Pictures:

3D Model

Symbol

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Pinout

Product Pictures

Documentation:

STP11NM60N Datasheet (20 Pages)

Package Outline Dimension on10 Page 11 Page 12 Page 13 Page 14 Page

STP11NM60N Datasheet PDF (20 Pages)

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STP11NM60N Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

3 Pin

Voltage Rating (DC)

600 V

Current Rating

10.0 A

Case/Package

TO-220-3

Drain to Source Resistance (on) (Rds)

370 mΩ

Polarity

N-Channel

Power Dissipation

90 W

Input Capacitance

850 pF

Gate Charge

31.0 nC

Drain to Source Voltage (Vds)

600 V

Breakdown Voltage (Drain to Source)

600 V

Breakdown Voltage (Gate to Source)

±25.0 V

Continuous Drain Current (Ids)

10.0 A

Rise Time

18.5 ns

Input Capacitance (Ciss)

850pF @50V(Vds)

Input Power (Max)

90 W

Fall Time

12 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

90W (Tc)

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STP11NM60N Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Not Recommended for New Designs

Packaging

Tube

Size-Length

10.4 mm

Size-Width

4.6 mm

Size-Height

9.15 mm

Operating Temperature

150℃ (TJ)

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STP11NM60N Environmental

STP11NM60N Function Overview

STP11NM60N Documents

STP11NM60N Datasheet

ST Microelectronics

20 Pages / 0.61 MByte

STP11NM60N Other References

ST Microelectronics

1 Pages / 0.15 MByte

STP11NM60 Documents

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