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Part Datasheet Search > MOSFETs > ST Microelectronics > STP25NM60N Datasheet PDF
STP25NM60N
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STP25NM60N Datasheet PDF (18 Pages)
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STP25NM60N Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
600 V
Current Rating
20.0 A
Case/Package
TO-220-3
Drain to Source Resistance (on) (Rds)
140 mΩ
Polarity
N-Channel
Power Dissipation
160 W
Input Capacitance
2.54 nF
Gate Charge
84.0 nC
Drain to Source Voltage (Vds)
600 V
Breakdown Voltage (Drain to Source)
600 V
Breakdown Voltage (Gate to Source)
±25.0 V
Continuous Drain Current (Ids)
21.0 A
Rise Time
18 ns
Input Capacitance (Ciss)
2400pF @50V(Vds)
Input Power (Max)
160 W
Fall Time
24 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
160W (Tc)

STP25NM60N Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Tube
Size-Length
10.4 mm
Size-Width
4.6 mm
Size-Height
9.15 mm
Operating Temperature
150℃ (TJ)

STP25NM60N Documents

ST Microelectronics
18 Pages / 0.58 MByte
ST Microelectronics
15 Pages / 0.22 MByte

STP25NM60 Documents

ST Microelectronics
N-channel 600V, 0.13Ω typ., 21A FDmesh(TM) II Power MOSFET (with fast diode) in TO-220 package
ST Microelectronics
Trans MOSFET N-CH 600V 21A 3Pin(3+Tab) TO-220 Tube
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