STP36NE06FP Datasheet PDF - ST Microelectronics

●DESCRIPTION

●This Power Mosfet is the latest development of SGS-THOMSON unique ”Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalance characteristics and less critical alignment steps therefore a remark

●able manufacturing reproducibility.

●■ TYPICAL RDS(on)= 0.032Ω

●■ EXCEPTIONAL dv/dt CAPABILITY

●■ 100% AVALANCHE TESTED

●■ LOW GATE CHARGE 100°C

●■ APPLICATION ORIENTED CHARACTERIZATION