STPSC406B-TR Datasheet PDF - ST Microelectronics

●The STPSC406B-TR is an ultrahigh performance Schottky Power Diode manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 600V rating. Due to the Schottky construction no recovery is shown at turn-OFF and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature. ST SiC diode will boosts the performance of PFC operations in hard switching conditions.

● No or negligible reverse recovery

● Switching behaviour independent of temperature

● Dedicated to PFC boost diode