STPSC4H065B-TR Datasheet PDF - ST Microelectronics

●The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

●Especially suited for use in PFC applications, this ST SiC diode will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases.

●Key Features

● No reverse recovery charge in application current range

● Switching behavior independent of temperature

● High forward surge capability

● Insulated package TO-220AC Ins:

● Insulated voltage: 2500 V rms

● Typical package capacitance: 7 pF