STPSC806G-TR Datasheet PDF - ST Microelectronics

●The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 600 V rating. Due to the Schottky construction no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

●ST SiC diodes will boost the performance of PFC operations in hard switching conditions.

●Key Features

● No or negligible reverse recovery

● Switching behavior independent of temperature

● Particularly suitable in PFC boost diode function