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STS30N3LLH6 Datasheet PDF - ST Microelectronics

Manufacturer:

ST Microelectronics

Category:

MOSFETs

Case Package:

SOIC-8

Description:

N-channel 30V, 0.0016Ω; , 30A, SO-8 STripFET(TM); VI DeepGATE(TM); Power MOSFET

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Documentation:

STS30N3LLH6 Datasheet (13 Pages)

Package Outline Dimension on10 Page 11 Page

STS30N3LLH6 Datasheet PDF (13 Pages)

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STS30N3LLH6 Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

8 Pin

Case/Package

SOIC-8

Power Dissipation

2.7W (Tc)

Drain to Source Voltage (Vds)

30 V

Breakdown Voltage (Drain to Source)

30 V

Rise Time

18 ns

Input Capacitance (Ciss)

4040pF @25V(Vds)

Input Power (Max)

2.7 W

Fall Time

46 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

2.7W (Tc)

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STS30N3LLH6 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Obsolete

Packaging

Tape & Reel (TR)

Operating Temperature

-55℃ ~ 150℃ (TJ)

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STS30N3LLH6 Environmental

STS30N3LLH6 Function Overview

STS30N3LLH6 Documents

STS30N3LLH6 Datasheet

ST Microelectronics

13 Pages / 0.75 MByte

STS30N3 Documents

STS30N3LLH6 Datasheet PDF

ST Microelectronics

N-channel 30V, 0.0016Ω; , 30A, SO-8 STripFET(TM); VI DeepGATE(TM); Power MOSFET

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