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Part Datasheet Search > MOSFETs > ST Microelectronics > STW23NM60N Datasheet PDF
STW23NM60N
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STW23NM60N Datasheet PDF (19 Pages)
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STW23NM60N Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-247-3
Number of Channels
1 Channel
Drain to Source Resistance (on) (Rds)
180 mΩ
Polarity
N-Channel
Power Dissipation
150 W
Drain to Source Voltage (Vds)
600 V
Breakdown Voltage (Drain to Source)
600 V
Continuous Drain Current (Ids)
9.50 A
Rise Time
15 ns
Input Capacitance (Ciss)
2050pF @50V(Vds)
Fall Time
36 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
55 ℃
Power Dissipation (Max)
150W (Tc)

STW23NM60N Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Tube
Size-Length
15.75 mm
Size-Width
5.15 mm
Size-Height
20.15 mm
Operating Temperature
150℃ (TJ)

STW23NM60N Documents

ST Microelectronics
19 Pages / 0.54 MByte

STW23NM60 Documents

ST Microelectronics
TO-247 N-CH 600V 19A
ST Microelectronics
N-channel 600V, 0.15Ω, 19.5A, FDmesh II Power MOSFET (with fast diode) TO-247
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