STW25NM60ND Datasheet PDF - ST Microelectronics

●The STW25NM60ND is a FDmesh™ II N-channel Power MOSFET features low input capacitance and gate charge. This FDmesh™ II Power MOSFET with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, this revolutionary device features extremely low ON-resistance and superior switching performance. It is ideal for bridge topologies and ZVS phase-shift converters.

● The worldwide best RDS (ON) area amongst the fast recovery diode device

● 100% Avalanche tested

● Extremely high dV/dt and avalanche capabilities