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Part Datasheet Search > MOSFETs > ST Microelectronics > STW56N60M2-4 Datasheet PDF
STW56N60M2-4
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STW56N60M2-4 Datasheet PDF (12 Pages)
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STW56N60M2-4 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
4 Pin
Case/Package
TO-247-4
Drain to Source Resistance (on) (Rds)
0.055 Ω
Polarity
N-CH
Power Dissipation
350 W
Drain to Source Voltage (Vds)
600 V
Continuous Drain Current (Ids)
52A
Rise Time
26.5 ns
Input Capacitance (Ciss)
3750pF @100V(Vds)
Fall Time
14 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
350W (Tc)

STW56N60M2-4 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
15.9 mm
Size-Width
5.1 mm
Size-Height
21.1 mm
Operating Temperature
150℃ (TJ)

STW56N60M2-4 Documents

ST Microelectronics
12 Pages / 0.75 MByte
ST Microelectronics
12 Pages / 0.88 MByte

STW56N60 Documents

ST Microelectronics
TO-247 N-CH 600V 50A
ST Microelectronics
TO-247 N-CH 600V 52A
ST Microelectronics
TO-247 N-CH 600V 52A
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