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Part Datasheet Search > MOSFETs > ST Microelectronics > STY60NM60 Datasheet PDF
STY60NM60
$ 8.566
STY60NM60 Datasheet PDF (8 Pages)
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STY60NM60 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
600 V
Current Rating
60.0 A
Case/Package
TO-247-3
Drain to Source Resistance (on) (Rds)
0.05 Ω
Polarity
N-Channel
Power Dissipation
560 W
Threshold Voltage
4 V
Drain to Source Voltage (Vds)
600 V
Breakdown Voltage (Drain to Source)
600 V
Breakdown Voltage (Gate to Source)
±30.0 V
Continuous Drain Current (Ids)
60.0 A
Rise Time
95 ns
Input Capacitance (Ciss)
7300pF @25V(Vds)
Input Power (Max)
560 W
Fall Time
76 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
560W (Tc)

STY60NM60 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Operating Temperature
150℃ (TJ)

STY60NM60 Documents

ST Microelectronics
8 Pages / 0.28 MByte
ST Microelectronics
5 Pages / 0.04 MByte
ST Microelectronics
1 Pages / 0.13 MByte

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TRANSISTOR,MOSFET,N-CHANNEL,500V V(BR)DSS,60A I(D),TO-247VAR
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