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Part Datasheet Search > MOSFETs > VISHAY > SUD45P03-09-GE3 Datasheet PDF
SUD45P03-09-GE3
$ 0.356
SUD45P03-09-GE3 Datasheet PDF (8 Pages)
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SUD45P03-09-GE3 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Case/Package
TO-252-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.0072 Ω
Polarity
P-Channel
Power Dissipation
2.1 W
Threshold Voltage
2.5 V
Drain to Source Voltage (Vds)
30 V
Continuous Drain Current (Ids)
45A
Input Capacitance (Ciss)
2700pF @15V(Vds)
Input Power (Max)
2.1 W
Operating Temperature (Max)
150 ℃

SUD45P03-09-GE3 Size & Package

TYPE
DESCRIPTION
Packaging
Tape & Reel (TR)
Minimum Packing Quantity
2000

SUD45P03-09-GE3 Documents

VISHAY
8 Pages / 0.15 MByte
VISHAY
10 Pages / 0.14 MByte

SUD45P0309 Documents

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TO-252-3P-CH 30V 45A 8.7mΩ
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MOSFET, P-Ch, Vds -30V, Vgs +/- 20V, Rds(on) 15mohm, Id -32A, TO-252, Pd 41.7W
Vishay Siliconix
MOSFET, P-Ch, Vds -30V, Vgs +/- 20V, Rds(on) 15mohm, Id -32A, TO-252, Pd 41.7W
Vishay Intertechnology
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