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Part Datasheet Search > MOSFETs > Vishay Semiconductor > SUD50N04-8M8P-4GE3 Datasheet PDF
SUD50N04-8M8P-4GE3
$ 0.566
SUD50N04-8M8P-4GE3 Datasheet PDF (10 Pages)
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SUD50N04-8M8P-4GE3 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-252-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.0069 Ω
Polarity
N-Channel
Power Dissipation
48.1 W
Threshold Voltage
1.5 V
Drain to Source Voltage (Vds)
40 V
Rise Time
15 ns
Input Capacitance (Ciss)
2400pF @20V(Vds)
Fall Time
15 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
48.1 W

SUD50N04-8M8P-4GE3 Size & Package

TYPE
DESCRIPTION
Packaging
Tape & Reel (TR)
Size-Length
6.73 mm
Size-Width
6.22 mm
Size-Height
2.38 mm
Operating Temperature
-55℃ ~ 150℃

SUD50N04-8M8P-4GE3 Documents

Vishay Semiconductor
10 Pages / 0.16 MByte
Vishay Semiconductor
9 Pages / 0.16 MByte
Vishay Semiconductor
2 Pages / 0.22 MByte

SUD50N048M8P4 Documents

VISHAY
TO-252-3 N-CH 40V 14A 8.8mΩ
Vishay Siliconix
MOSFET N-CH 40V 14A TO-252
Vishay Semiconductor
MOSFET 40V 50A 48.1W 8.8mohm @ 10V
Vishay Intertechnology
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