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SUD50P10-43L-GE3 Datasheet PDF - VISHAY

Manufacturer:

VISHAY

Category:

MOSFETs

Case Package:

TO-252-2

Description:

TO-252-2P-CH 100V 37.1A 43mΩ

Pictures:

3D Model

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Documentation:

SUD50P10-43L-GE3 Datasheet (9 Pages)

SUD50P10-43L-GE3 Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

3 Pin

Case/Package

TO-252-2

Drain to Source Resistance (on) (Rds)

43 mΩ

Polarity

P-CH

Power Dissipation

6.9 W

Drain to Source Voltage (Vds)

100 V

Continuous Drain Current (Ids)

37.1A

Input Capacitance (Ciss)

4600pF @50V(Vds)

Fall Time

100 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

6900 mW

View Datasheet >

SUD50P10-43L-GE3 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tape & Reel (TR)

Operating Temperature

-55℃ ~ 150℃

Minimum Packing Quantity

2000

View Datasheet >

SUD50P10-43L-GE3 Environmental

SUD50P10-43L-GE3 Function Overview

SUD50P10-43L-GE3 Documents

SUD50P10-43L-GE3 Datasheet

VISHAY

9 Pages / 0.2 MByte

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Vishay Intertechnology

Power Field-Effect Transistor, 36.4A I(D), 100V, 0.043ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, DPAK-3/2

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