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Part Datasheet Search > MOSFETs > Vishay Semiconductor > SUM110N10-09-E3 Datasheet PDF
SUM110N10-09-E3
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SUM110N10-09-E3 Datasheet PDF (8 Pages)
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SUM110N10-09-E3 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-263
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.0095 Ω
Polarity
N-Channel
Power Dissipation
437.5 W
Threshold Voltage
4 V
Drain to Source Voltage (Vds)
100 V
Continuous Drain Current (Ids)
110 A
Rise Time
125 ns
Fall Time
130 ns
Operating Temperature (Max)
175 ℃

SUM110N10-09-E3 Size & Package

TYPE
DESCRIPTION
Packaging
Tape & Reel (TR)
Operating Temperature
-55℃ ~ 175℃

SUM110N10-09-E3 Documents

Vishay Semiconductor
8 Pages / 0.14 MByte
Vishay Semiconductor
8 Pages / 0.15 MByte

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N-Channel 100V (D-S) 200C MOSFET
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TO-252-3 N-CH 100V 110A 9.5mΩ
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Vishay Semiconductor
Trans MOSFET N-CH 100V 110A 3Pin(2+Tab) TO-263
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