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Part Datasheet Search > Transistors > VISHAY > SUM70040M-GE3 Datasheet PDF
SUM70040M-GE3
$ 1.559
SUM70040M-GE3 Datasheet PDF (8 Pages)
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SUM70040M-GE3 Specifications

TYPE
DESCRIPTION
Number of Pins
7 Pin
Case/Package
TO-263-7
Number of Positions
7 Position
Drain to Source Resistance (on) (Rds)
0.003 Ω
Polarity
N-Channel
Power Dissipation
375 W
Threshold Voltage
4 V
Drain to Source Voltage (Vds)
100 V
Continuous Drain Current (Ids)
120A
Rise Time
22 ns
Input Capacitance (Ciss)
5100pF @10V(Vds)
Fall Time
15 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
375000 mW

SUM70040M-GE3 Size & Package

TYPE
DESCRIPTION
Packaging
Tape & Reel (TR)
Minimum Packing Quantity
800

SUM70040M-GE3 Documents

VISHAY
8 Pages / 0.16 MByte
VISHAY
9 Pages / 0.17 MByte
VISHAY
2 Pages / 0.28 MByte

SUM70040 Documents

VISHAY
TO-263-7 N-CH 100V 120A 4.6mΩ
VISHAY
TO-263-3 N-CH 100V 120A 4mΩ
Vishay Siliconix
MOSFET N-CH 100V 120A D2PAK
Vishay Semiconductor
VISHAY SUM70040E-GE3 MOSFET Transistor, N Channel, 120A, 100V, 0.0032Ω, 10V, 4V
Vishay Semiconductor
VISHAY SUM70040M-GE3 MOSFET Transistor, N Channel, 120A, 100V, 0.003Ω, 10V, 4V
Vishay Siliconix
MOSFET N-CH 100V 120A D2PAK
Vishay Intertechnology
Power Field-Effect Transistor, 120A I(D), 100V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, D2PAK-7/6
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