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Part Datasheet Search > BJTs > ON Semiconductor > TIP122TU Datasheet PDF
TIP122TU
$ 0.441
TIP122TU Datasheet PDF (5 Pages)
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TIP122TU Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220-3
Number of Positions
3 Position
Power Dissipation
2 W
Breakdown Voltage (Collector to Emitter)
100 V
hFE Min
1000 @3A, 3V
Input Power (Max)
2 W
DC Current Gain (hFE)
1000
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
65 W

TIP122TU Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Tube
Size-Length
10.67 mm
Size-Width
4.83 mm
Size-Height
16.51 mm

TIP122TU Documents

ON Semiconductor
5 Pages / 0.21 MByte
ON Semiconductor
5 Pages / 0.21 MByte
ON Semiconductor
1 Pages / 0.09 MByte

TIP122 Documents

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Trans Darlington NPN 100V 5A 2000mW 3Pin(3+Tab) TO-220 Tube
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Trans Darlington NPN 100V 5A 2000mW Automotive 3Pin(3+Tab) TO-220AB Bag
Multicomp
MULTICOMP TIP122 Bipolar (BJT) Single Transistor, Darlington, NPN, 100V, 65W, 5A, 1000
CJ
TO-220-3L NPN 100V 5000mA
ON Semiconductor
TO-220-3 NPN 100V 5A
SLKOR
Ic=5000mA Vce=4000mV Vceo=100V
Solid State
SOLID STATE TIP122 Bipolar (BJT) Single Transistor, Darlington, NPN, 100V, 65W, 5A, 1000 hFE
TI
100V, 5A, 65W, NPN darlington-connected silicon power transistor
KEC(Korea Electronics)
Darlington Transistor
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