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TIP33C
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TIP33C Datasheet PDF (6 Pages)
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TIP33C Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Voltage Rating (DC)
100 V
Current Rating
10.0 A
Case/Package
TO-218-3
Polarity
NPN
Power Dissipation
80 W
Gain Bandwidth Product
3 MHz
Breakdown Voltage (Collector to Emitter)
100 V
Continuous Collector Current
10A
hFE Min
20 @3A, 4V
hFE Max
100
Input Power (Max)
80 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
65 ℃

TIP33C Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Tube
Size-Length
15.2 mm
Size-Width
4.9 mm
Operating Temperature
-65℃ ~ 150℃ (TJ)
Minimum Packing Quantity
30

TIP33C Documents

ON Semiconductor
6 Pages / 0.1 MByte
ON Semiconductor
10 Pages / 0.15 MByte

TIP33 Documents

ST Microelectronics
10A, 100V, NPN, Si, POWER TRANSISTOR, TO-247, ROHS COMPLIANT, PACKAGE-3
Motorola
Transistor
Continental Device
Power Bipolar Transistor,
KEC(Korea Electronics)
Power Bipolar Transistor, 10A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3P(N), 3 PIN
ON Semiconductor
High Power NPN Bipolar Power Transistor, TO-247, 30-TUBE
Central Semiconductor
COMPLEMENTARY SILICON POWER TRANSISTORS
TI
10A, 40V, NPN, Si, POWER TRANSISTOR
Bourns J.W. Miller
Power Bipolar Transistor, 10A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
Mospec
POWER TRANSISTORS(10A,40-100V,80W)
New Jersey Semiconductor
Trans GP BJT NPN 40V 10A 3Pin(3+Tab) TO-218
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