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Part Datasheet Search > MOSFETs > Toshiba > TK16E60W5,S1VX Datasheet PDF
TK16E60W5,S1VX
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TK16E60W5,S1VX Datasheet PDF (10 Pages)
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TK16E60W5,S1VX Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220-3
Number of Channels
1 Channel
Drain to Source Resistance (on) (Rds)
180 mΩ
Power Dissipation
130 W
Threshold Voltage
3 V
Breakdown Voltage (Drain to Source)
600 V
Rise Time
40 ns
Input Capacitance (Ciss)
1350pF @300V(Vds)
Fall Time
5 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
55 ℃
Power Dissipation (Max)
130W (Tc)

TK16E60W5,S1VX Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
10.16 mm
Size-Width
4.45 mm
Size-Height
15.1 mm
Operating Temperature
150℃ (TJ)

TK16E60W5,S1VX Documents

Toshiba
10 Pages / 0.24 MByte

TK16E60W5S1 Documents

Toshiba
Trans MOSFET N-CH 600V 15.8A 3Pin TO-220
Toshiba
Trans MOSFET N-CH 600V 15.8A 3Pin TO-220
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