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Part Datasheet Search > MOSFETs > Toshiba > TK31J60W,S1VQ Datasheet PDF
TK31J60W,S1VQ
$ 8.003
TK31J60W,S1VQ Datasheet PDF (10 Pages)
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TK31J60W,S1VQ Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-3-3
Power Dissipation
230 W
Drain to Source Voltage (Vds)
600 V
Rise Time
32 ns
Input Capacitance (Ciss)
3000pF @300V(Vds)
Input Power (Max)
230 W
Fall Time
8.5 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
230W (Tc)

TK31J60W,S1VQ Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Material
Silicon
Size-Length
15.5 mm
Size-Width
4.5 mm
Size-Height
20 mm
Operating Temperature
150℃ (TJ)

TK31J60W,S1VQ Documents

Toshiba
10 Pages / 0.24 MByte
Toshiba
7 Pages / 0.21 MByte

TK31J60WS1 Documents

Toshiba
Trans MOSFET N-CH Si 600V 30.8A 3Pin(3+Tab) TO-3PN Bag/Tube
Toshiba
Trans MOSFET N-CH 600V 30.8A 3Pin TO-3P(N)
Toshiba
MOSFET N-channel 600V 30.8A TO3P
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