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Part Datasheet Search > MOSFETs > Toshiba > TK58E06N1,S1X Datasheet PDF
TK58E06N1,S1X
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TK58E06N1,S1X Datasheet PDF (9 Pages)
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TK58E06N1,S1X Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220-3
Power Dissipation
110 W
Drain to Source Voltage (Vds)
60 V
Rise Time
11 ns
Input Capacitance (Ciss)
3400pF @30V(Vds)
Input Power (Max)
110 W
Fall Time
17 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
110W (Tc)

TK58E06N1,S1X Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Material
Silicon
Size-Length
10.16 mm
Size-Width
4.45 mm
Size-Height
15.1 mm
Operating Temperature
150℃ (TJ)

TK58E06N1,S1X Documents

Toshiba
9 Pages / 0.23 MByte

TK58E06N1S1 Documents

Toshiba
TO-220 N-CH 60V 105A
Toshiba
Mosfet n Ch 60V 58A To-220
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