TLP250F Datasheet PDF - Toshiba

●Transistor Inverters

●Inverter for Air Conditioners

●IGBT Gate Drivers

●Power MOSFET Gate Drivers

●The TOSHIBA TLP250F(INV) consists of a GaAℓAs light emitting diode optically coupled to an integrated photodetector and is housed in an 8-pin DIP package.

●The TLP250F(INV) is suitable for gate driving circuitry of IGBTs or power MOSFETs.

●Absolute maximum ratings and electrical characteristics are the same as those of the TLP250(INV) and listed in its datasheet.

●• Input threshold current: IF = 5 mA (max)

●• Supply current : 11 mA (max)

●• Supply voltage : 10 V to 35 V

●• Output current : ±1.5 A (max)

●• Switching time : tpHL, tpLH = 0.5 μs (max)

●• Isolation voltage : 2500 Vrms (min)

●• UL recognized : UL1577, file no. E67349

●• Option (D4) type

●   VDE approved: DIN EN 60747-5-2, certificate No. 40011913

●   Maximum operating insulation voltage: 1140 VPK

●   Maximum permissible overvoltage: 6000 VPK

●   (Note 1) When an EN 60747-5-2 approved type is needed, please designate the “ Option (D4) ”.

●• Structural parameter

●   Creepage distance: 8.0 mm (min)

●   Clearance: 8.0 mm (min)