● Organization... 1048576 By 8 Bits
●524288 By 16 Bits
● Array-Blocking Architecture
● Two 8K-Byte/4K-Word Parameter Blocks
● One 96K-Byte/48K-Word Main Block
● Seven 128K-Byte/64K-Word Main Blocks
● One 16K-Byte/8K-Word Protected Boot Block
● Top or Bottom Boot Locations
● All Inputs/Outputs TTL-Compatible
● Maximum Access/Minimum Cycle Time
●5-V VCC 3-V VCC
●"28F008Axy70 70 ns 100 ns
●"28F008Axy80 80 ns 120 ns
●"28F800Axy70 70 ns 100 ns
●"28F800Axy80 80 ns 120 ns
●(See Table 1 for VCC/VPP Voltage Configuration)
● 100000- and 10000-Program/Erase Cycle Versions
● Three Temperature Ranges
● Commercial...0°C to 70°C
● Extended...- 40°C to 85°C
● Automotive...- 40°C to 125°C
● Embedded Program/Erase Algorithms
● Automated Byte Programming
● Automated Word Programming
● Automated Block Erase
● Erase Suspend/Erase Resume
● Automatic Power-Saving Mode
● JEDEC Standards Compatible
● Compatible With JEDEC Byte/Word Pinouts
● Compatible With JEDEC EEPROM Command Set
● Fully Automated On-Chip Erase and Byte/Word Program Operations
● Package Options
● 44-Pin Plastic Small-Outline Package (PSOP) (DBJ Suffix)
● 40-Pin Thin Small-Outline Package (TSOP) (DCD Suffix)
● 48-Pin TSOP (DCD Suffix)
● 48-Ball Micro Ball Grid Array
●(uBGATM) available
● Low Power Dissipation (VCC = 5.5 V)
● Active Write...330 mW (Byte Write)
● Active Read...220 mW (Byte Read)
● Active Write...330 mW (Word Write)
● Active Read...275 mW (Word Read)
● Block Erase...330 mW
● Standby...0.55 mW (CMOS-Input Levels)
● Deep Power-Down Mode...0.044 mW
● Write-Protection for Boot Block
● Industry Standard Command-State Machine (CSM)
● Erase Suspend/Resume
● Algorithm-Selection Identifier
● Flexible VPP/Supply Voltage Combination
●uBGA is a trademark of Tessera, Inc.
●## description
●The TMS28F800Axy is a 8388608-bit, boot-block flash memory that can be electrically block-erased and reprogrammed. The TMS28F800Axy is organized in a blocked architecture consisting of:
● One 16K-byte/8K-word protected boot block
● Two 8K-byte/4K-word parameter blocks
● One 96K-byte/48K-word main block
● Seven 128K-byte/64K-word main blocks
●The device can be ordered in four different voltage configurations (see Table 1). Operation as a 1024K-byte (8-bit) or a 512K-word (16-bit) organization is user-definable.
●Embedded program and block-erase functions are fully automated by the on-chip write-state machine (WSM), simplifying these operations and relieving the system microcontroller of these secondary tasks. WSM status can be monitored by an on-chip status register to determine progress of program/erase tasks. The device features user-selectable block erasure.
●The TMS28F800AEy configuration allows the user to perform memory reads using 2.7-3.6-V VCC and 5-V VCC for optimum power consumption. Erasing or programming the device can be accomplished with VPP = 3 V,
●5 V, or 12-V. This configuration is offered in the commercial temperature range (0°C to 70°C) and the extended temperature range (-40°C to 85°C). Also, TMS28F800ASy offers VCC = 3 - 3.6 V and VCC = 5 V for optimum power consumption. The TMS28F800ALy configuration allows performance of memory reads using
●VCC = 3.0 - 3.6 V for optimum power consumption. The TMS28F800AVy configuration allows performance of memory reads using VCC = 2.7-3.6 V for optimum power consumption.
●The TMS28F800AZy configuration offers a 5-V memory read with a 3-V/5-V/12-V program and erase. This configuration is offered in three temperature ranges: 0°C to 70°C, - 40°C to 85°C, - 40°C to 125°C.
●The TMS28F800Axy is offered in a 44-pin plastic small-outline package (PSOP) and a 48-pin thin small-outline package (TSOP) organized as 16-bit or 8-bit.
●The TMS28F008 is functionally equivalent to the "F800 except that it is organized only as a 8-bit configuration, and it is offered only in a 40-pin TSOP.
