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Part Datasheet Search > MOSFETs > Toshiba > TPC8129,LQ(S Datasheet PDF
TPC8129,LQ(S
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TPC8129,LQ(S Datasheet PDF (9 Pages)
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TPC8129,LQ(S Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Case/Package
SOP-8
Number of Channels
1 Channel
Drain to Source Resistance (on) (Rds)
28 mΩ
Power Dissipation
1.9 W
Drain to Source Voltage (Vds)
30 V
Breakdown Voltage (Drain to Source)
30 V
Input Capacitance (Ciss)
1650pF @10V(Vds)
Power Dissipation (Max)
1W (Ta)

TPC8129,LQ(S Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
4.9 mm
Size-Width
3.9 mm
Size-Height
1.68 mm
Operating Temperature
150℃ (TJ)

TPC8129,LQ(S Documents

Toshiba
9 Pages / 0.25 MByte
Toshiba
63 Pages / 1.58 MByte
Toshiba
9 Pages / 0.25 MByte

TPC8129 Documents

Toshiba
Trans MOSFET P-CH 30V 9A 8Pin SOP
Toshiba
MOSFET N-Ch -30V FET 1650pF -9A 1.9W
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