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Part Datasheet Search > MOSFETs > Toshiba > TPH1R712MD,L1Q Datasheet PDF
TPH1R712MD,L1Q
Part 3D Model
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TPH1R712MD,L1Q Datasheet PDF (9 Pages)
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TPH1R712MD,L1Q Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
SOP-8
Polarity
P-CH
Power Dissipation
2.8 W
Drain to Source Voltage (Vds)
20 V
Continuous Drain Current (Ids)
60A
Rise Time
14 ns
Input Capacitance (Ciss)
10900pF @10V(Vds)
Fall Time
512 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
78W (Tc)

TPH1R712MD,L1Q Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Material
Silicon
Operating Temperature
150℃ (TJ)

TPH1R712MD,L1Q Documents

Toshiba
9 Pages / 0.75 MByte

TPH1R712MDL1 Documents

Toshiba
SOPAdvance P-CH 20V 60A
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