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Part Datasheet Search > MOSFETs > Toshiba > TPN2R703NL,L1Q Datasheet PDF
TPN2R703NL,L1Q
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TPN2R703NL,L1Q Datasheet PDF (9 Pages)
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TPN2R703NL,L1Q Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
TSON-Advance-8
Power Dissipation
42 W
Drain to Source Voltage (Vds)
30 V
Rise Time
4.4 ns
Input Capacitance (Ciss)
2100pF @15V(Vds)
Fall Time
5.7 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
700mW (Ta), 42W (Tc)

TPN2R703NL,L1Q Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Cut Tape (CT)
Size-Length
3.1 mm
Size-Width
3.1 mm
Size-Height
0.85 mm
Operating Temperature
150℃ (TJ)

TPN2R703NL,L1Q Documents

Toshiba
9 Pages / 0.22 MByte

TPN2R703NLL1 Documents

Toshiba
Trans MOSFET N-CH 30V 90A 8Pin TSON
Toshiba
TSON N-CH 30V 90A
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