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UPA811T-T1-A Datasheet PDF - California Eastern Laboratories

Manufacturer:

California Eastern Laboratories

Category:

BJTs

Case Package:

TSSOP-6

Description:

Trans RF BJT NPN 10V 0.035A 6Pin SOT-363 T/R

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3D Model

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Documentation:

UPA811T-T1-A Datasheet (6 Pages)

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UPA811T-T1-A Datasheet PDF (6 Pages)

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UPA811T-T1-A Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

6 Pin

Case/Package

TSSOP-6

Power Dissipation

200 mW

Breakdown Voltage (Collector to Emitter)

10 V

Gain

7.5 dB

hFE Min

80 @5mA, 3V

Input Power (Max)

200 mW

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-65 ℃

Power Dissipation (Max)

200 mW

View Datasheet >

UPA811T-T1-A Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Obsolete

Packaging

Tape & Reel (TR)

Material

Silicon

Size-Height

0.9 mm

Operating Temperature

150℃ (TJ)

View Datasheet >

UPA811T-T1-A Environmental

UPA811T-T1-A Function Overview

UPA811T-T1-A Documents

UPA811T-T1-A Datasheet

California Eastern Laboratories

6 Pages / 0.24 MByte

UPA811T-T1-A Other Datasheet PDF

California Eastern Laboratories

8 Pages / 0.17 MByte

UPA811TT1 Documents

UPA811T-T1 Datasheet PDF

NEC

RF DUAL TRANSISTORS NPN SOT-363

UPA811T-T1-A Datasheet PDF

California Eastern Laboratories

Trans RF BJT NPN 10V 0.035A 6Pin SOT-363 T/R

UPA811T-T1-A Datasheet PDF

Renesas Electronics

2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC, SO-6

UPA811T-T1-A Datasheet PDF

NEC

RF Small Signal Bipolar Transistor, 0.035A I(C), 2-Element, Ultra High Frequency Band, Silicon, NPN, PLASTIC, SO-6

UPA811T-T1FB Datasheet PDF

Renesas Electronics

2Channel, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC, SO-6

UPA811T-T1FB-A Datasheet PDF

Renesas Electronics

2Channel, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC, SO-6

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