VB30100SG-E3/8W Datasheet PDF - Vishay Semiconductor

●High-Voltage Trench MOS Barrier Schottky Rectifier

●FEATURES

●• Trench MOS Schottky technology

●• Low forward voltage drop, low power losses

●• High efficiency operation

●• Low thermal resistance

●• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)

●• Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package)

●• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

●TYPICAL APPLICATIONS

●For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection.