●GENERAL DESCRIPTION
●The W971GG6JB is a 1G bits DDR2 SDRAM, organized as 8,388,608 words 8 banks 16 bits. This device achieves high speed transfer rates up to 1066Mb/sec/pin (DDR2-1066) for various applications. W971GG6JB is sorted into the following grade parts: -18, -25, 25L, 25I, 25A, 25K, -3 and -3A. The -18 grade parts is compliant to the DDR2-1066 (6-6-6) specification. The -25/25L/25I/25A/25K grade parts are compliant to the DDR2-800 (5-5-5) specification (the 25L grade parts is guaranteed to support IDD2P = 7 mA and IDD6 = 4 mA at commercial temperature, the 25I industrial grade parts is guaranteed to support -40°C ≤ TCASE ≤ 95°C). The -3/-3A grade parts is compliant to the DDR2-667 (5-5-5) specification.
●FEATURES
●Power Supply: VDD, VDDQ = 1.8 V ± 0.1 V
●Double Data Rate architecture: two data transfers per clock cycle
●CAS Latency: 3, 4, 5, 6 and 7
●Burst Length: 4 and 8
●Bi-directional, differential data strobes (DQS and DQS) are transmitted / received with data
●Edge-aligned with Read data and center-aligned with Write data
●DLL aligns DQ and DQS transitions with clock
●Differential clock inputs (CLK and CLK)
●Data masks (DM) for write data
●Commands entered on each positive CLK edge, data and data mask are referenced to both edges of DQS
●Posted CAS programmable additive latency supported to make command and data bus efficiency
●Read Latency = Additive Latency plus CAS Latency (RL = AL + CL)
●Off-Chip-Driver impedance adjustment (OCD) and On-Die-Termination (ODT) for better signal quality
●Auto-precharge operation for read and write bursts
●Auto Refresh and Self Refresh modes
●Precharged Power Down and Active Power Down
●Write Data Mask
●Write Latency = Read Latency - 1 (WL = RL - 1)
●Interface: SSTL_18
●Packaged in WBGA 84 Ball (8X12.5 mm2), using Lead free materials with RoHS compliant
Part 3D Model
