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IR2104 Datasheet PDF

Part Series:
IR2104 Series
Category:
FET Drivers
Description:
MOSFET DRVR 600V 0.36A 2Out Hi/Lo Side Half Brdg Inv/Non-Inv 8Pin SOIC T/R
Updated Time: 2023/01/13 01:21:30 (UTC + 8)

IR2104 FET Drivers Datasheet PDF

IR2104 Datasheet PDF FET Drivers

15 Pages
International Rectifier
Driver 600V 0.36A 2Out Hi/Lo Side Half Brdg Inv/Non-Inv 8Pin SOIC Tube
15 Pages
Infineon
MOSFET DRVR 600V 0.36A 2Out Hi/Lo Side Half Brdg Inv/Non-Inv 8Pin SOIC
15 Pages
Infineon
Driver 600V 0.36A 2Out Hi/Lo Side Half Brdg Inv/Non-Inv 8Pin SOIC T/R
14 Pages
Infineon
MOSFET DRVR 600V 0.36A 2Out Hi/Lo Side Half Brdg Inv/Non-Inv 8Pin PDIP

IR2104STRPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Operating Voltage
10V ~ 20V
Case/Package
SOIC-8
Rise/Fall Time
100ns, 50ns
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IR2104STRPBF Function Overview

The IR2104STRPBF is a high voltage high speed power MOSFET and IGBT Half-Bridge Driver with dependent high and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates from 10 to 600V.
Floating channel designed for bootstrap operation
Tolerant to negative transient voltage (dV/dt immune)
Under-voltage lockout
3.3, 5 and 15V Logic input compatible
Cross-conduction prevention logic
Internally set dead-time
High-side output in phase with input
Shut down input turns OFF both channels
Matched propagation delay for both channels
Device has limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
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