APT100GT60JRDL Application Note - Microsemi

Trans IGBT Chip N-CH 600V 148A 500000mW 4Pin SOT-227

Trans IGBT Chip N-CH 600V 148A 500000mW 4Pin SOT-227

Trans IGBT Chip N-CH 600V 148A 500000mW 3Pin(3+Tab) T-MAX

Insulated Gate Bipolar Transistor - Resonant Mode; Package: ISOTOP ; BV(CES) (V): 600; VCE(sat) (V): 2.5; IC (A): 80;

IGBT MOD 600V 148A 500W ISOTOP

IGBT 600V 148A 500W SOT247

IGBT MOD 600V 148A 500W ISOTOP

Thunderbolt IGBT