FF1000R17IE4DP_B2 Application Note - Infineon

Trans IGBT Module N-CH 1700V 1.39kA 6250000mW 12Pin PRIME3 Tray

Insulated Gate Bipolar Transistor, 1390A I(C), 1700V V(BR)CES, N-Channel, MODULE-10

Trans IGBT Module N-CH 1700V 1.39kA 6250000mW 12Pin PRIME3 Tray

Trans IGBT Module N-CH 1.7kV 1390A 12Pin PRIME3-1

1700V PrimePACK™3 dual IGBT module with IGBT4, NTC and pre-applied Thermal Interface Material.

1700V PrimePACK™3 dual IGBT module with IGBT4, NTC and pre-applied Thermal Interface Material.

Trans IGBT Module N-CH 1.7kV 1390A 10Pin PRIME3

1700V PrimePACK3 dual IGBT module with IGBT4 and NTC. | Summary of Features: Extended Operation Temperature T(tvj op)...

Igbt Module Vces 1700V 1000A